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1

Kinetics of silicon amorphization by N+ implantation: Dose rate and substrate temperature effects

A. Claverie, A. Roumili, N. Gessinn, J. Beauvillain

Journal:

Materials Science and Engineering: B

Year:

1989

Language:

english

File:

PDF, 594 KB

english, 1989

2

On the Amorphization of Silicon by Light Ion Implantation: Ion Flux and Substrate Temperature Effects

Claverie, A., Roumili, A., Gessinn, N., Beauvillain, J.

Journal:

MRS Proceedings

Year:

1990

Language:

english

File:

PDF, 3.51 MB

english, 1990

3

HF/Ethanol Preoxidation Silicon Cleaning: Analysis of the Silicon Surface and of the Ultra-Thin Oxide Layer

Garrido, B., Gessinn, F., Prom, J.L., Morante, J.R., Samitier, J., Sarrabayrouse, G.

Journal:

MRS Proceedings

Year:

1992

Language:

english

File:

PDF, 1.08 MB

english, 1992

4

Temperature Dependence of the Kinetics of Silicon Amorphization by He Ion Implantation

Laânab, L., Roumili, A., Faye, M. M., Gessinn, N., Claverie, A.

Journal:

MRS Proceedings

Year:

1992

Language:

english

File:

PDF, 1.09 MB

english, 1992

5

M.O.S. Transistors with > 1 μm Thick Gate Oxide for Ionizing Radiation Dosimetry

Gessinn, F., Sarrabayrouse, G.

Journal:

MRS Proceedings

Year:

1993

Language:

english

File:

PDF, 312 KB

english, 1993

6

[IEEE 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC) - Toulouse, France (2016.10.9-2016.10.12)] 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC) - Nanotechnology practical teaching at school and university

Respaud, M., Tap, H., Grisolia, J., Ben Assayag, G., Launay, J., Lachaize, S., Vieu, C., Boy, M.L., Calvel, S., Daguerre, P. Bourdeu, Capello, C., Guerin, F., Rouhabi, C., Tan, R.P., Gessinn, F.

Year:

2016

Language:

english

File:

PDF, 130 KB

english, 2016